IRF3710SPBF Details_IRF3710SPBF Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,420(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3130 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Other

Price advantage, IRF3710SPBF is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NP82N055KHE-E1-AZ	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$1.96020	In Stock:3644
FDMC2512SDC	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 25V 32A 8PQFN	$2.55360	In Stock:3340
IXTR68P20T	IXYS	MOSFETs - Single	Datasheet	MOSFET P-CH 200V 44A ISOPLUS247	No price	In Stock:19728
2SJ681(Q)	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET P-CH 60V 5A PW-MOLD2	No price	In Stock:19730
APT10M07JVR	Microsemi Corporation	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 225A ISOTOP	No price	In Stock:19732