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MOSFETs - RF
A2G35S200-01SR3 Picture

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A2G35S200-01SR3

  • NXP USA Inc.
  • New
  • AIRFAST RF POWER GAN TRANSISTOR
  • Datasheet download
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In Stock:2,886(Ref. price)
Qty.Unit PriceExt. Price
1
$251.28451
$251.28451
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type
GaN HEMT
Frequency
3.4GHz ~ 3.6GHz
Gain
16.1dB
Voltage - Test
48 V
Current Rating (Amps)
-
Noise Figure
-
Current - Test
291 mA
Power - Output
180W
Voltage - Rated
125 V
Package / Case
NI-400S-2S
Supplier Device Package
NI-400S-2S
Other
Price advantage, A2G35S200-01SR3 is available in stock and can be delivered on the same day
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