SI7949DP-T1-E3 Details_SI7949DP-T1-E3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3.2A
Rds On (Max) @ Id, Vgs	64mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual

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