VWM200-01P Details_VWM200-01P Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	6 N-Channel (3-Phase Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	210A
Rds On (Max) @ Id, Vgs	5.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	V2-PAK
Supplier Device Package	V2-PAK

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