APTMC120HM17CT3AG Details_APTMC120HM17CT3AG Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Bulk
FET Type	4 N-Channel
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	147A (Tc)
Rds On (Max) @ Id, Vgs	17mOhm @ 100A, 20V
Vgs(th) (Max) @ Id	4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs	332nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	5576pF @ 1000V
Power - Max	750W
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	SP3

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