SSM6L39TU,LF Details_SSM6L39TU,LF Related parameters PDF_Toshiba Semiconductor and Storage-Winwic

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	800mA
Rds On (Max) @ Id, Vgs	143mOhm @ 600MA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	268pF @ 10V
Power - Max	500mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	UF6

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