NTE4007 Details_NTE4007 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bag
FET Type	3 N and 3 P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	500mW
Operating Temperature	-55°C ~ 125°C
Mounting Type	-
Package / Case	-
Supplier Device Package	-

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