SI4511DY-T1-E3 Details_SI4511DY-T1-E3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	7.2A, 4.6A
Rds On (Max) @ Id, Vgs	14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.1W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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