IRF7902PBF Details_IRF7902PBF Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.4A, 9.7A
Rds On (Max) @ Id, Vgs	22.6mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id	2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 15V
Power - Max	1.4W, 2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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