FQS4900TF Details_FQS4900TF Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	QFET®
Package	Bulk
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V, 300V
Current - Continuous Drain (Id) @ 25°C	1.3A, 300mA
Rds On (Max) @ Id, Vgs	550mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id	1.95V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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