SI3909DV-T1-GE3 Details_SI3909DV-T1-GE3 Related parameters PDF

MOSFETs - Arrays

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,818(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	200mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id	500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.15W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP

Other

Price advantage, SI3909DV-T1-GE3 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
UPA2324T1P-E1-A#YK1	Renesas Electronics America Inc	MOSFETs - Arrays	Datasheet	MOSFET	No price	In Stock:19728
BSD235CH6327XTSA1	Infineon Technologies	MOSFETs - Arrays	Datasheet	MOSFET N/P-CH 20V SOT363	$0.38800	In Stock:39020
2SJ409-90STR	Renesas Electronics America Inc	MOSFETs - Arrays	Datasheet	20A, 100V, P-CHANNEL MOSFET	$6.19740	In Stock:7852
APTM10DSKM09T3G	Microchip Technology	MOSFETs - Arrays	Datasheet	MOSFET 2N-CH 100V 139A SP3	$72.02900	In Stock:19734
ALD1101APAL	Advanced Linear Devices Inc.	MOSFETs - Arrays	Datasheet	MOSFET 2N-CH 10.6V 8DIP	$7.67755	In Stock:19738