PDTC143EQAZ Details_PDTC143EQAZ Related parameters PDF

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Bulk
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	230 MHz
Power - Max	280 mW
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Supplier Device Package	DFN1010D-3

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