NJL4281DG Details_NJL4281DG Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN + Diode (Isolated)
Current - Collector (Ic) (Max)	15 A
Voltage - Collector Emitter Breakdown (Max)	350 V
Vce Saturation (Max) @ Ib, Ic	1V @ 800mA, 8A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5A, 5V
Power - Max	230 W
Frequency - Transition	35MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-5
Supplier Device Package	TO-264

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